US 12,327,768 B2
Substrate processing system and substrate processing method
Hayato Tanoue, Koshi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Aug. 5, 2022, as Appl. No. 17/817,661.
Application 17/817,661 is a continuation of application No. 17/049,068, granted, now 11,450,578, previously published as PCT/JP2019/016125, filed on Apr. 15, 2019.
Claims priority of application No. 2018-087735 (JP), filed on Apr. 27, 2018; and application No. 2018-171253 (JP), filed on Sep. 13, 2018.
Prior Publication US 2022/0375755 A1, Nov. 24, 2022
Int. Cl. H01L 21/304 (2006.01); H01L 21/311 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01)
CPC H01L 22/20 (2013.01) [H01L 21/304 (2013.01); H01L 21/31111 (2013.01); H01L 21/67075 (2013.01); H01L 21/67259 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A substrate processing method of processing a substrate, comprising:
forming a modification layer within a first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate, wherein the modification layer serves as a starting point of removing the peripheral portion of the first substrate; and
performing a predetermined processing for reducing a bonding force at an interface where the first substrate and a second substrate are bonded to each other in the peripheral portion,
wherein in the forming of the modification layer, the modification layer is formed more inwards in a diametric direction than a position corresponding to an end of the interface processed in the performing of the predetermined processing on the interface.