US 12,327,765 B2
Semiconductor device with contact structures
Yi-Hsiung Lin, Zhubei (TW); Yi-Hsun Chiu, Zhubei (TW); and Shang-Wen Chang, Jhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 17, 2023, as Appl. No. 18/318,835.
Application 17/464,917 is a division of application No. 16/149,597, filed on Oct. 2, 2018, granted, now 11,127,631, issued on Sep. 21, 2021.
Application 18/318,835 is a continuation of application No. 17/464,917, filed on Sep. 2, 2021, granted, now 11,694,927.
Claims priority of provisional application 62/697,582, filed on Jul. 13, 2018.
Prior Publication US 2023/0290683 A1, Sep. 14, 2023
Int. Cl. H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01)
CPC H01L 21/76897 (2013.01) [H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 23/5283 (2013.01); H01L 23/535 (2013.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 30/797 (2025.01); H10D 62/116 (2025.01); H10D 62/151 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a first source/drain structure;
a second source/drain structure spaced apart from the first source/drain structure;
a conductive contact electrically connected to the first source/drain structure;
a first conductive via over the conductive contact; and
a second conductive via directly above the second source/drain structure, wherein the second conductive via is longer than the first conductive via, wherein a first direct projection of the first source/drain structure on a top surface of the conductive contact and a second direct projection of the first conductive via on the top surface of the conductive contact do not overlap each other, wherein an interface between the first conductive via and the conductive contact is lower than a top of the second conductive via and higher than a bottom of the second conductive via.