US 12,327,761 B2
Void-free contact trench fill in gate-all-around FET architecture
Nicolas Louis Breil, San Jose, CA (US); Byeong Chan Lee, San Jose, CA (US); and Benjamin Colombeau, Santa Clara, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Apr. 25, 2022, as Appl. No. 17/728,871.
Claims priority of provisional application 63/194,673, filed on May 28, 2021.
Prior Publication US 2022/0384258 A1, Dec. 1, 2022
Int. Cl. H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H10D 62/10 (2025.01)
CPC H01L 21/76877 (2013.01) [H01L 21/28518 (2013.01); H01L 21/28556 (2013.01); H01L 21/28562 (2013.01); H01L 21/76843 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H10D 30/031 (2025.01); H10D 30/6219 (2025.01); H10D 30/6729 (2025.01); H10D 64/01 (2025.01); H10D 64/251 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01); H01L 21/02647 (2013.01); H01L 21/32135 (2013.01); H01L 21/76841 (2013.01); H01L 21/76879 (2013.01); H01L 21/76883 (2013.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 30/6737 (2025.01); H10D 30/6743 (2025.01); H10D 30/6757 (2025.01); H10D 62/115 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A method of forming a contact trench structure in a semiconductor device, the method comprising:
performing a first selective deposition process to form a contact on sidewalls of a trench, each of the sidewalls of the trench comprising a first cross section of a first material and a second cross section of a second material, the first selective deposition process comprising:
epitaxially growing a third material on the sidewalls of the trench; and
etching portions of the third material formed on the first cross section of the first material to form the contact selectively on the second cross section of the second material within the trench;
performing a second selective deposition process to form a metal silicide layer on the contact, the second selective deposition process comprising:
growing metal silicide material on the contact and the first cross section of the first material within the trench; and
etching portions of the metal silicide material formed on the first cross section of the first material to form the metal silicide layer selectively on the contact;
performing a first metal fill process to form a contact plug within the trench, the first metal fill process comprising depositing a contact plug metal material within the trench;
performing an etch process to form an opening within the trench, comprising partially etching the contact plug metal material within the trench; and
performing a second metal fill process, the second metal fill process comprising depositing the contact plug metal material within the opening.