| CPC H01L 21/32137 (2013.01) [H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H01J 37/32724 (2013.01); H01L 21/67069 (2013.01); H01J 2237/334 (2013.01)] | 8 Claims |
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1. An apparatus for processing a substrate, comprising:
a plasma generating module including a plasma generating region and a first gas providing unit for providing a first gas to the plasma generating region, the plasma generating module using the first gas to generate plasma in the plasma generating region;
a process region separated from the plasma generating region and where the substrate is processed;
a support module arranged in the process region to support the substrate;
a second gas providing unit for providing a second gas to the process region without passing through the plasma generating region; and
a control module programmed to control the plasma generating module and the second gas providing unit,
wherein the second gas providing unit comprises a gas injection member for providing the second gas to the process region, the gas injection member comprising a heater installed therein and configured to heat the gas injection member to a predetermined temperature,
wherein the control module is programmed to control the second gas providing unit during a first period of forming a second gas atmosphere, a second period of generating the plasma, a third period of processing the substrate using the plasma, and a fourth period after the processing to remove first gas,
wherein the control module is programmed to control the plasma generating module to generate plasma during the second period and the third period using first gas,
wherein the third period includes a first processing period and a second processing period, and
wherein the second gas providing unit is programmed to provide the second gas at a first flow rate during the first period, the second period and the first processing period, and at a second flow rate greater than the first flow rate during the second processing period and a fourth period.
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