| CPC H01L 21/02532 (2013.01) [C30B 25/10 (2013.01); C30B 25/12 (2013.01); C30B 25/14 (2013.01); C30B 25/165 (2013.01); C30B 25/20 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/0262 (2013.01); H01L 21/02658 (2013.01)] | 6 Claims |
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1. A vapor phase growth system that grows a semiconductor single-crystal thin film on a main surface of a single-crystal substrate, comprising:
a reaction vessel body including a gas inlet port on a first end side and a gas outlet port on a second end side in a horizontal direction, wherein the reaction vessel body is configured such that the single-crystal substrate is substantially horizontally and rotationally held on a disk-shaped susceptor, which is rotated and driven in an inner space of the reaction vessel body, and a source gas that forms a semiconductor single-crystal thin film is introduced into the reaction vessel body through the gas inlet port, flows along the main surface of the single-crystal substrate, and then discharged through the gas outlet port, and a preheating ring is arranged to surround the susceptor;
a susceptor lifting mechanism that raises and lowers the susceptor between a first position and a second position, wherein in the first position, a top surface of the susceptor is positioned above a bottom surface of the preheating ring, and a source gas distribution space having a predetermined height dimension is defined between the top surface of the susceptor and a bottom surface of a ceiling plate of the reaction vessel body, and in the second position, the top surface of the susceptor is positioned below the bottom surface of the preheating ring, and a substrate loading/unloading space having a greater height dimension than that of the source gas distribution space is defined between the top surface of the susceptor and the bottom surface of the preheating ring, wherein the susceptor is rotationally driven via a rotary shaft member with an upper end coupled to a lower surface of the susceptor, and the susceptor lifting mechanism raises and lowers the susceptor along with the rotary shaft member, and wherein a plurality of lift pins are provided in a circumferential direction of the susceptor, with a lower end protruding downward from the susceptor, to lift up the single-crystal substrate in a form of pushing up a peripheral edge of a bottom surface of the single-crystal substrate on the susceptor from a bottom side, and below the preheating ring in the reaction vessel body, a substrate lifting portion may be provided, including: lift pin driving arms provided corresponding to the lift pins, each of which has a lift pin biasing portion formed on a tip side of the arm to bias the corresponding lift pin upward from below; and a lift sleeve that allows a rotation drive of the rotary shaft member, and is arranged outside the rotary shaft member coaxially and along an axis of the rotary shaft member where the base end of the lift pin driving arm is coupled to the lift sleeve;
a substrate transfer member having a substrate holding portion at a front end of the substrate transfer member, wherein the single-crystal substrate is loaded and unloaded in a form of being held horizontally;
a substrate transfer member driving unit that reciprocates the substrate transfer member horizontally between a substrate loading/unloading position and a preparation position, wherein in the substrate loading/unloading position, with respect to the susceptor positioned in the second position, the substrate holding portion is positioned immediately above the susceptor, and in the preparation position, the substrate holding portion is positioned in a preparation chamber formed outside the reaction vessel body; and
wherein after the retraction horizontally the preparation position of the substrate transfer member with the single-crystal substrate detached is completed, only the susceptor is raised to the first position out of the susceptor and the substrate lifting portion.
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