US 12,327,721 B2
Ultraviolet radiation activated atomic layer deposition
Christine Y. Ouyang, Hsinchu (TW); and Ziwei Fang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 27, 2021, as Appl. No. 17/646,103.
Application 17/646,103 is a continuation of application No. 16/745,532, filed on Jan. 17, 2020, granted, now 11,211,244.
Prior Publication US 2022/0199403 A1, Jun. 23, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/00 (2006.01); C23C 16/02 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H01L 21/02348 (2013.01) [C23C 16/02 (2013.01); C23C 16/45529 (2013.01); C23C 16/45536 (2013.01); H01L 21/02172 (2013.01); H01L 21/0262 (2013.01); H01L 21/28556 (2013.01); H01L 21/76825 (2013.01); H01L 21/76862 (2013.01); H10D 84/014 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming an opening in a semiconductor structure;
depositing a work function layer in the opening; and
performing, in a deposition chamber, one or more deposition cycles to form a metal layer on the work function layer, wherein each deposition cycle comprises:
flowing a first precursor into the deposition chamber;
forming a layer of first precursor molecules on the work function layer;
performing, after forming the layer of first precursor molecules, a first treatment on the first precursor by activating the first precursor using a UV radiation source;
purging the deposition chamber to remove an unreacted first precursor after performing the first treatment;
flowing a second precursor into the deposition chamber; and
performing a second treatment on the second precursor, wherein the first treatment comprises a first ultraviolet (UV) wavelength and the second treatment comprises a second UV wavelength.