US 12,327,715 B2
Semiconductor tool for copper deposition
Chia-Hung Tsai, Hsinchu County (TW); Chin-Szu Lee, Taoyuan (TW); Szu-Hua Wu, Zhubei (TW); Jui-Hung Ho, Hsinchu (TW); Chi-Hung Liao, Hsinchu (TW); and Yu-Jen Chien, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 16, 2022, as Appl. No. 17/651,272.
Prior Publication US 2023/0260770 A1, Aug. 17, 2023
Int. Cl. H01L 21/285 (2006.01); C23C 14/35 (2006.01); C23C 14/54 (2006.01); H01J 37/34 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H05K 9/00 (2006.01)
CPC H01J 37/3488 (2013.01) [C23C 14/35 (2013.01); C23C 14/54 (2013.01); H01J 37/3447 (2013.01); H01J 37/3452 (2013.01); H01J 37/3476 (2013.01); H01L 21/2855 (2013.01); H01L 21/76879 (2013.01); H05K 9/0088 (2013.01); H01L 23/53238 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a chamber including at least one electromagnet and at least one flow optimizer that are configured to direct copper ions from a copper target onto a wafer;
a magnetic shield adjacent to the chamber and configured to reduce electromagnetic noise within the chamber; and
a transport mechanism configured to move the magnetic shield from a first position adjacent to the chamber to a second position adjacent to the chamber based on a command from a processor, wherein the second position is based on a desired thickness of a deposition of a first layer of copper associated with a first portion of the wafer.