US 12,327,712 B2
High voltage power supply apparatus and plasma etching equipment having the same
Jihwan Kim, Hwaseong-si (KR); Hyunbae Kim, Yongin-si (KR); Hongseung Cho, Hwaseong-si (KR); Seungbo Shim, Seoul (KR); and Sungyeol Kim, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 1, 2022, as Appl. No. 17/901,263.
Claims priority of application No. 10-2021-0119845 (KR), filed on Sep. 8, 2021.
Prior Publication US 2023/0075642 A1, Mar. 9, 2023
Int. Cl. B32B 41/00 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01)
CPC H01J 37/32715 (2013.01) [H01J 37/32568 (2013.01); H01J 37/32082 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/334 (2013.01); H01L 21/67167 (2013.01); H01L 21/67219 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A high voltage power supply apparatus, comprising:
a high voltage direct current voltage source;
a power switch configured to apply an output of the high voltage direct current voltage source to a process equipment; and
a sensing circuit unit, including:
a sensor unit including a sensor and at least one operational amplifier,
a reference voltage detection unit connected to a node between the sensor and the at least one operational amplifier, and
a digital signal processing unit,
wherein the sensing circuit unit is connected to an output terminal through which the output of the high voltage direct current voltage source is applied to the process equipment.