| CPC H01J 37/32449 (2013.01) [C23C 16/505 (2013.01); H01J 37/32082 (2013.01); H05K 9/0081 (2013.01); H01J 2237/3321 (2013.01)] | 6 Claims |
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1. A method of manufacturing a semiconductor device, the method comprising:
placing substrates in a chamber, the chamber including shower heads enclosed in respective shielding members;
supplying a reaction gas onto the substrates via the shower heads; and
providing radio-frequency powers to the shower heads without an electromagnetic interference between the shower heads by using the shielding members,
wherein the chamber further includes:
a lower housing, and
an upper housing on the lower housing and on the shower heads, power straps connected to the shower heads extending into the upper housing, and
wherein the shielding members include:
shower-head shielding members enclosing the shower heads respectively, and
strap shielding members connected to the shower-head shielding members and enclosing the power straps, respectively-
wherein the shower-head shielding members are connected to each other by capacitors,
wherein the capacitors comprise:
short range capacitors connected between the shower-head shielding members that are disposed in short range distance to remove or minimize a near field interference between the shower-head shielding members, and
long range capacitors connected between the shower-head shielding members that are disposed in long range distance longer than the short range distance to remove or minimize a far field interference between the shower-head shielding members.
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