| CPC H01J 37/3211 (2013.01) [H01J 37/321 (2013.01); H01J 37/32119 (2013.01); H01J 37/32174 (2013.01); H01J 37/32183 (2013.01); H01L 21/3065 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01); H01L 21/67069 (2013.01)] | 20 Claims |

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1. A method for manufacturing a semiconductor device, the method comprising:
providing a substrate in a chamber; and
providing first and second radio-frequency powers into first and second antennas on the chamber to generate plasma on the substrate,
wherein each of the first and second antennas comprises:
an input electrode;
branch electrodes connected to the input electrode, wherein the branch electrodes are provided in plurality; and
coil electrodes connected to opposite ends of the branch electrodes, respectively, the coil electrodes extending and connecting the ends of the branch electrodes,
wherein a number of turns of the coil electrodes of the first antenna is equal to a number of turns of the coil electrodes of the second antenna,
wherein the coil electrodes are eccentric coil electrodes, configured such that a center of each of the eccentric coil electrodes is horizontally offset from a center on which the input electrode is disposed,
wherein the respective eccentric coil electrodes of the first and second antennas at least partially overlap one another in a vertical direction, and
wherein each of the eccentric coil electrodes comprises:
a top coil including a large-quarter top turn connected to the branch electrodes and a small-quarter top turn having a length shorter than that of the large-quarter top turn, the small-quarter top turn closer to the input electrode than the large-quarter top turn;
a connection electrode connected to the small-quarter top turn of the top coil; and
a bottom coil that is connected to the connection electrode and that is under the top coil, the bottom coil including a small-quarter bottom turn connected to the small-quarter top turn by the connection electrode and a large-quarter bottom turn having a length longer than that of the small-quarter bottom turn, the large-quarter bottom turn further from the input electrode than the small-quarter bottom turn,
wherein the large-quarter top turn, the small-quarter top turn, the connection electrode, the small-quarter bottom turn, and the large-quarter bottom turn are connected in series.
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