US 12,327,665 B2
Resistor material, resistor element and method of manufacturing the resistor element
Nozomi Ito, Tokyo (JP); Yorinobu Kunimune, Tokyo (JP); Kenichiro Abe, Tokyo (JP); and Nobuhito Shiraishi, Tokyo (JP)
Assigned to RENESAS ELECTRONICS CORPORATION, Tokyo (JP)
Filed by RENESAS ELECTRONICS CORPORATION, Tokyo (JP)
Filed on Aug. 22, 2022, as Appl. No. 17/892,639.
Claims priority of application No. 2021-165953 (JP), filed on Oct. 8, 2021.
Prior Publication US 2023/0116260 A1, Apr. 13, 2023
Int. Cl. H01C 7/06 (2006.01); H01C 17/232 (2006.01); H01C 17/26 (2006.01); H10D 1/47 (2025.01)
CPC H01C 7/06 (2013.01) [H01C 17/232 (2013.01); H01C 17/265 (2013.01); H10D 1/474 (2025.01)] 14 Claims
OG exemplary drawing
 
1. A resistor material comprising:
a plurality of crystalline phases having a positive temperature coefficient of resistance; and
an amorphous phase having a negative temperature coefficient of resistance and having a resistivity higher than each of the plurality of the crystalline phases,
wherein the resistor material consists of Cr—Si—C as constituent elements.