US 12,327,664 B2
Oxide thin film
Soo Deok Han, Seoul (KR); and Won Young Choi, Seoul (KR)
Assigned to VANAM INC., Seoul (KR)
Filed by VANAM INC., Seoul (KR)
Filed on Nov. 29, 2024, as Appl. No. 18/963,901.
Application 18/963,901 is a continuation of application No. PCT/KR2023/017695, filed on Nov. 6, 2023.
Claims priority of application No. 10-2022-0146598 (KR), filed on Nov. 5, 2022; and application No. 10-2023-0151910 (KR), filed on Nov. 6, 2023.
Prior Publication US 2025/0095886 A1, Mar. 20, 2025
Int. Cl. H01C 7/00 (2006.01); H01C 7/108 (2006.01); H01C 17/08 (2006.01); H01C 17/12 (2006.01)
CPC H01C 7/006 (2013.01) [H01C 17/08 (2013.01); H01C 17/12 (2013.01); H01C 7/008 (2013.01); H01C 7/108 (2013.01)] 4 Claims
OG exemplary drawing
 
1. An oxide thin film comprising:
a single crystal substrate; and
a VO2 layer laminated on the single crystal substrate and doped with Ti,
wherein a VO2 XRD peak of the VO2 layer does not appear in a range of 2θ=20° to 60°, but appears only in a range of 2θ=60° to 70°.