US 12,327,017 B2
Memory device for selecting memory block according to amount of data and operating method of the same
Hee Youl Lee, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jan. 7, 2020, as Appl. No. 16/736,710.
Application 16/736,710 is a division of application No. 15/095,284, filed on Apr. 11, 2016, granted, now 10,572,152.
Claims priority of application No. 10-2015-0156078 (KR), filed on Nov. 6, 2015.
Prior Publication US 2020/0142606 A1, May 7, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0608 (2013.01) [G06F 3/0616 (2013.01); G06F 3/0631 (2013.01); G06F 3/064 (2013.01); G06F 3/0652 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A method of operating a NAND flash memory device including main memory blocks each of which has a same storage capacity, comprising:
receiving first program data to be stored in the NAND flash memory device;
determining an amount of the first program data;
selecting a main memory block among the main memory blocks;
dividing the main memory block into a first sub-memory block and a second sub-memory block according to the amount of the first program data, wherein the first sub-memory block is selected for storing the first program data;
performing a first program operation of the first program data on the first sub-memory block;
receiving second program data to be stored in the NAND flash memory device;
determining an amount of the second program data;
dividing the second sub-memory block in an erase status into a third sub-memory block and a fourth sub-memory block according to the amount of the second program data, wherein the third sub-memory block is selected for storing the second program data; and
performing a second program operation of the second program data on the third sub-memory block.