| CPC G05B 19/4155 (2013.01) [H01L 21/00 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); G05B 2219/45212 (2013.01)] | 9 Claims |

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1. A method for controlling an etching tool, comprising:
executing a first etching recipe on a current wafer;
generating a first set of data of the current wafer by a first measurement module, wherein the first set of data is one of a data of critical dimension of the current wafer, a data of film thickness of the current wafer, and an electrical data collected by the first measurement module;
analyzing the first set of data by an artificial intelligence module coupled to the first measurement module, wherein the artificial intelligence module uses at least one of a table-based control and a formula-based control to analyze the first set of data;
generating, by the artificial intelligence module, a second etching recipe and applying the second etching recipe to the etching tool when the first set of data is not within a predetermined range; and
executing the second etching recipe on a next wafer, wherein a wafer-to-wafer time frame is updated and adjusted in response to the second etching recipe.
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