US 12,326,667 B2
Combination of inline metrology and on tool metrology for advanced packaging
Ulrich Mueller, Berkeley, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Dec. 15, 2022, as Appl. No. 18/081,751.
Prior Publication US 2024/0201605 A1, Jun. 20, 2024
Int. Cl. G03F 9/00 (2006.01)
CPC G03F 9/7023 (2013.01) [G03F 9/7069 (2013.01); G03F 9/7084 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method for processing a substrate, comprising:
loading a substrate onto a stage of an inline metrology tool comprising at least one scanning device, wherein the substrate comprises:
one or more packages comprising one or more die having die marks formed on the one or more die; and
one or more global alignment marks formed on the substrate;
scanning the substrate with the at least one scanning device to obtain a first set of coordinate data, wherein the first set of coordinate data comprises an actual location of the one or more global alignment marks and an actual location of the die marks;
establishing general location information of the substrate based on the actual location of the one or more global alignment marks;
determining the actual location of the die marks relative to the general location information;
comparing the actual location of the die marks relative to the general location information with a design location of the die marks relative to the general location information to determine a correction factor;
loading the substrate onto a stage of a maskless lithography tool comprising at least one scanning device and at least one image projection system;
scanning the substrate with the at least one scanning device of the maskless lithography tool to establish the general location information of the substrate based on the actual location of the one or more global alignment marks; and
patterning subsequent layers onto the substrate using a digital correction mask and the at least one image projection system, wherein the digital correction mask is based, at least in part on the correction factor.