US 12,326,664 B2
Dose mapper method
Shuo Liu, Shanghai (CN)
Assigned to Shanghai Huali Integrated Circuit Corporation, Shanghai (CN)
Filed by Shanghai Huali Integrated Circuit Corporation, Shanghai (CN)
Filed on Jun. 24, 2022, as Appl. No. 17/848,498.
Claims priority of application No. 202110723738.0 (CN), filed on Jun. 29, 2021.
Prior Publication US 2022/0413393 A1, Dec. 29, 2022
Int. Cl. G03F 7/00 (2006.01)
CPC G03F 7/70625 (2013.01) [G03F 7/705 (2013.01); G03F 7/70508 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A dose mapper method, wherein the dose mapper method comprises the following steps:
step 1: provide tools and masks, wherein the tools comprise LITHO tools and ETCH tools, wherein a number of the LITHO tools is more than one, a number of the ETCH tools is more than one, and a number of the masks is more than one;
collecting critical dimension fingerprints of each tool and each mask and storing the collected critical dimension fingerprints in a database, wherein a critical dimension fingerprint of each LITHO tool and a critical dimension fingerprint of each mask are obtained through the following steps:
step 1.1: selecting one LITHO tool and one mask, and performing exposure and development to obtain corresponding ADI CD data;
step 1.2: decomposing the obtained ADI CD data to obtain a critical dimension fingerprint of the selected one LITHO tool and the critical dimension fingerprint of the selected one mask; and
step 1.3: changing a combination of the selected one LITHO tool and the selected one mask, repeating steps 1.1-1.2 until critical dimension fingerprints of all LITHO tools and all masks are obtained, and storing the critical dimension fingerprints in the database;
step 2: before exposing a wafer, pre-selecting a tool and a mask to be used, selecting corresponding critical dimension fingerprints from the database according to the pre-selected tool and mask, and combining the corresponding critical dimension fingerprints to form a total critical dimension fingerprint;
step 3: obtaining dose mapper data for exposure of the wafer according to the total critical dimension fingerprint; and
step 4: exposing the wafer, and correcting the exposure of the wafer according to the dose mapper data in an exposure process of the wafer.