US 12,326,660 B2
Pattern forming method, combined processing apparatus, and recording medium
Noriko Sakurai, Yokohama Kanagawa (JP); and Kosuke Takai, Yokohama Kanagawa (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Mar. 14, 2022, as Appl. No. 17/694,290.
Claims priority of application No. 2021-152450 (JP), filed on Sep. 17, 2021.
Prior Publication US 2023/0089980 A1, Mar. 23, 2023
Int. Cl. G03F 7/00 (2006.01); H01J 37/317 (2006.01); H01L 21/027 (2006.01)
CPC G03F 7/0002 (2013.01) [G03F 7/0035 (2013.01); H01J 37/3174 (2013.01); H01L 21/0273 (2013.01); H01L 21/0274 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A pattern forming method comprising:
forming an organic film on a processing target material, the organic film comprising a convex part and a remaining film part adjacent to the convex part, the remaining film part being thinner than the convex part;
after forming the organic film with the convex part and the remaining film part, irradiating the organic film with an electron beam to decrease a dry etching rate of the organic film, a decrease amount in a dry etching rate of the remaining film part being lower than a decrease amount in a dry etching rate of the convex part;
removing the remaining film part by dry etching of the organic film; and
patterning the processing target material by dry etching using the organic film from which the remaining film part has been removed as a mask.