US 12,326,599 B2
Method of forming photonics structures
Gurtej Sandhu, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jan. 2, 2024, as Appl. No. 18/402,575.
Application 18/402,575 is a continuation of application No. 17/816,336, filed on Jul. 29, 2022, granted, now 11,886,019.
Application 17/816,336 is a continuation of application No. 16/926,490, filed on Jul. 10, 2020, granted, now 11,402,590, issued on Aug. 2, 2022.
Application 16/926,490 is a continuation of application No. 16/015,778, filed on Jun. 22, 2018, granted, now 10,761,275, issued on Aug. 12, 2020.
Application 16/015,778 is a continuation of application No. 13/600,779, filed on Aug. 31, 2012, granted, now 10,094,988, issued on Oct. 9, 2018.
Prior Publication US 2024/0411090 A1, Dec. 12, 2024
Int. Cl. H01L 21/32 (2006.01); G02B 6/12 (2006.01); G02B 6/122 (2006.01); G02B 6/42 (2006.01); H10D 84/40 (2025.01); H10F 71/00 (2025.01); H10F 77/40 (2025.01); H01L 21/324 (2006.01)
CPC G02B 6/42 (2013.01) [G02B 6/12004 (2013.01); G02B 6/122 (2013.01); H10D 84/40 (2025.01); H10F 71/128 (2025.01); H10F 77/413 (2025.01); G02B 2006/12061 (2013.01); G02B 2006/12142 (2013.01); G02B 2006/12169 (2013.01); H01L 21/324 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method of making a semiconductor structure, comprising:
forming a CMOS structure comprising an electronic device including a first semiconductor material, the at least one CMOS structure disposed over a substrate;
forming a photonic device disposed over the electronic device, the photonic device comprising a second semiconductor material and dopant implants activated by microwave heating to between 200 and 500 degrees Celsius; and
forming a first interlayer dielectric (ILD) metallization structure between the first semiconductor material and the second semiconductor material, the first ILD metallization structure configured to electrically couple the electronic device and the photonic device; and
forming a second ILD metallization structure including multiple metallization layers disposed over the photonic device and electrically coupled to the first ILD metallization structure by a contact passing through the second semiconductor material.