US 12,326,593 B1
Techniques for singulating photonics die with optical quality edge
Brett E. Huff, Keller, TX (US); and Pradeep Srinivasan, Fremont, CA (US)
Assigned to Aeva, Inc., Mountain View, CA (US)
Filed by AEVA, INC., Mountain View, CA (US)
Filed on Jan. 26, 2024, as Appl. No. 18/424,201.
Int. Cl. G02B 6/122 (2006.01); G01S 7/481 (2006.01); G01S 17/58 (2006.01); G01S 17/931 (2020.01); G02B 6/136 (2006.01); G02B 6/12 (2006.01)
CPC G02B 6/136 (2013.01) [G01S 7/4817 (2013.01); G01S 17/58 (2013.01); G01S 17/931 (2020.01); G02B 2006/12061 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A photonics die, comprising:
a first surface comprising fabricated components;
a second surface comprising bulk silicon; and
at least one edge comprising:
a first portion generated from etching a trench from the first surface during singulation of the photonics die from a wafer, wherein a section of the photonics die remains between the fabricated components and the trench on the first surface; and
a second portion generated from a mechanical dicing cut from the second surface, wherein during singulation the mechanical dicing cut overlaps with the trench on the first surface of the wafer to separate the die from the wafer.