US 12,326,416 B2
Differential sensing with biofet sensors
Ching-Hui Lin, Hsinchu (TW); Chun-Ren Cheng, Hsinchu (TW); Shih-Fen Huang, Jhubei (TW); and Fu-Chun Huang, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 10, 2023, as Appl. No. 18/132,500.
Application 17/208,596 is a division of application No. 16/400,500, filed on May 1, 2019, granted, now 10,955,379.
Application 18/132,500 is a continuation of application No. 17/208,596, filed on Mar. 22, 2021, granted, now 11,624,726.
Claims priority of provisional application 62/737,645, filed on Sep. 27, 2018.
Prior Publication US 2023/0288369 A1, Sep. 14, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G01N 27/414 (2006.01); B01L 3/00 (2006.01); G01N 27/30 (2006.01)
CPC G01N 27/4145 (2013.01) [B01L 3/502715 (2013.01); G01N 27/302 (2013.01); G01N 27/4148 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A sensor, comprising:
a substrate;
a first field effect transistor (FET) sensor, comprising:
a first gate structure disposed on a first side of the substrate,
a first dielectric layer disposed on a second side of the substrate, and
a first capture reagent coupled to the first dielectric layer; and
a second FET sensor, comprising:
a second gate structure disposed on the first side of the substrate,
a second dielectric layer disposed on the second side of the substrate, and
a second capture reagent coupled to the second dielectric layer, wherein the second capture reagent is different from the first capture reagent and wherein the first and second FET sensors are coupled to a common reference electrode.