US 12,326,361 B2
Photosensitive circuit structure and optical device
Qingrong Ren, Hefei (CN); Rubo Xing, Hefei (CN); Junfeng Li, Hefei (CN); Gang Wang, Hefei (CN); Shuang Cui, Hefei (CN); Haofeng Zhang, Hefei (CN); Rui Guo, Hefei (CN); and Dandan Sun, Hefei (CN)
Assigned to Hefei Visionox Technology Co., Ltd., Hefei (CN)
Filed by Hefei Visionox Technology Co., Ltd., Anhui (CN)
Filed on Jul. 31, 2023, as Appl. No. 18/362,124.
Application 18/362,124 is a continuation of application No. PCT/CN2022/115968, filed on Aug. 30, 2022.
Claims priority of application No. 202111603737.9 (CN), filed on Dec. 24, 2021.
Prior Publication US 2023/0400353 A1, Dec. 14, 2023
Int. Cl. G01J 1/44 (2006.01); G01T 1/20 (2006.01)
CPC G01J 1/44 (2013.01) [G01T 1/20184 (2020.05); G01J 2001/446 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A photosensitive circuit structure, comprising:
a photosensitive unit comprising a photodiode and a reset transistor;
a signal amplification unit comprising an amplification transistor; and
a control unit comprising a control transistor;
wherein, an input terminal of the reset transistor is electrically connected to a power supply terminal, an output terminal of the reset transistor is electrically connected to a control terminal of the amplification transistor, and a control terminal of the reset transistor is electrically connected to a reset signal terminal; an input terminal of the amplification transistor is electrically connected to the power supply terminal, an output terminal of the amplification transistor is electrically connected to an input terminal of the control transistor, and a control terminal of the control transistor is electrically connected to a signal control terminal;
a drain current of the reset transistor is smaller than a drain current of the amplification transistor, and a drain current of the control transistor is smaller than the drain current of the amplification transistor; and
a carrier mobility of the reset transistor is smaller than a carrier mobility of the amplification transistor, and the carrier mobility of the reset transistor is smaller than a carrier mobility of the control transistor.