US 12,325,936 B2
Aluminum nitride substrate manufacturing method, aluminum nitride substrate, and method of removing strain layer introduced into aluminum nitride substrate by laser processing
Tadaaki Kaneko, Sanda (JP); Daichi Dojima, Sanda (JP); Moeko Matsubara, Osaka (JP); and Yoshitaka Nishio, Osaka (JP)
Assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo (JP); TOYO ALUMINIUM KABUSHIKI KAISHA, Osaka (JP); and TOYOTA TSUSHO CORPORATION, Aichi (JP)
Appl. No. 17/996,198
Filed by KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo (JP); TOYO ALUMINIUM KABUSHIKI KAISHA, Osaka (JP); and TOYOTA TSUSHO CORPORATION, Aichi (JP)
PCT Filed Mar. 30, 2021, PCT No. PCT/JP2021/013748
§ 371(c)(1), (2) Date Oct. 13, 2022,
PCT Pub. No. WO2021/210395, PCT Pub. Date Oct. 21, 2021.
Claims priority of application No. 2020-072552 (JP), filed on Apr. 14, 2020.
Prior Publication US 2023/0212785 A1, Jul. 6, 2023
Int. Cl. C30B 33/02 (2006.01); B23K 26/382 (2014.01); B23K 26/402 (2014.01); B23K 103/00 (2006.01); C30B 29/40 (2006.01); C30B 33/04 (2006.01); H01L 21/02 (2006.01)
CPC C30B 33/02 (2013.01) [B23K 26/382 (2015.10); B23K 26/402 (2013.01); C30B 29/403 (2013.01); C30B 33/04 (2013.01); B23K 2103/52 (2018.08); H01L 21/02389 (2013.01); H01L 21/0243 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A method for manufacturing an aluminum nitride substrate, comprising a strained layer removal step of removing a strained layer of an aluminum nitride substrate by etching the aluminum nitride substrate through a heat treatment under a nitrogen atmosphere,
wherein the heat treatment is performed under a condition where the heating temperature of the aluminum nitride substrate is 1700° C. or less, and the nitrogen back pressure is 1 kPa or more; or
wherein the heat treatment is performed under a condition where the nitrogen back pressure is 20 kPa or more.