US 12,325,935 B2
Single-crystal silicon carbide wafer, single-crystal silicon carbide ingot, and method for producing single-crystal silicon carbide
Tomonori Umezaki, Tokyo (JP); Kazuto Kumagai, Tokyo (JP); and Gaku Kono, Tokyo (JP)
Assigned to CENTRAL GLASS COMPANY, LIMITED, Ube (JP)
Appl. No. 18/683,013
Filed by CENTRAL GLASS COMPANY, LIMITED, Ube (JP)
PCT Filed Sep. 26, 2022, PCT No. PCT/JP2022/035722
§ 371(c)(1), (2) Date Feb. 12, 2024,
PCT Pub. No. WO2023/054263, PCT Pub. Date Apr. 6, 2023.
Claims priority of application No. 2021-160607 (JP), filed on Sep. 30, 2021.
Prior Publication US 2024/0368806 A1, Nov. 7, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. B32B 3/02 (2006.01); C30B 15/20 (2006.01); C30B 29/36 (2006.01)
CPC C30B 29/36 (2013.01) [C30B 15/206 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A single-crystal silicon carbide wafer,
wherein boron is included at a concentration of 1.0×1016 atoms/cm3 or less in the single-crystal silicon carbide wafer,
a region having a basal plane dislocation density of 100 counts/cm2 or less is present on a surface of the single-crystal silicon carbide wafer,
the region includes a center of the surface, and
an area of the region is one fourth or more of an area of the surface.