US 12,325,933 B2
Silicon carbide powder, method for manufacturing silicon carbide ingot using the same, and silicon carbide wafer
Jong Hwi Park, Gyeonggi-do (KR); Kap Ryeol Ku, Gyeonggi-do (KR); Jung Gyu Kim, Gyeonggi-do (KR); Jung Woo Choi, Gyeonggi-do (KR); Jung Doo Seo, Gyeonggi-do (KR); and Myung Ok Kyun, Gyeonggi-do (KR)
Assigned to SENIC INC., Chungcheongnam-do (KR)
Filed by Senic Inc., Chungcheongnam-do (KR)
Filed on Dec. 22, 2022, as Appl. No. 18/086,888.
Claims priority of application No. 10-2021-0186627 (KR), filed on Dec. 23, 2021.
Prior Publication US 2023/0203707 A1, Jun. 29, 2023
Int. Cl. C30B 29/06 (2006.01); C30B 29/36 (2006.01); C30B 33/10 (2006.01); C30B 33/12 (2006.01); C30B 35/00 (2006.01); H01L 21/02 (2006.01)
CPC C30B 29/06 (2013.01) [C30B 29/36 (2013.01); C30B 33/10 (2013.01); C30B 33/12 (2013.01); C30B 35/002 (2013.01); H01L 21/02126 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A silicon carbide powder, comprising carbon and silicon,
wherein O1s/C1s measured by X-ray photoelectron spectroscopy is 0.28 or less,
wherein O1s/Si2p of a surface measured by X-ray photoelectron spectroscopy is 0.39 or less,
wherein an oxygen ratio in the surface measured by X-ray photoelectron spectroscopy is 13 atom % or less,
wherein a concentration of oxygen in a depth where an oxygen concentration change according to an etching time is 2 atom %/100s or less is 5 atom % or less.