US 12,325,932 B2
Method for CVD deposition of n-type doped silicon carbide and epitaxial reactor
Silvio Preti, Baranzate (IT); and Gianluca Cividini, Baranzate (IT)
Assigned to LPE S.p.A., Baranzate (IT)
Appl. No. 18/024,539
Filed by LPE S.p.A., Baranzate (IT)
PCT Filed Sep. 9, 2021, PCT No. PCT/IB2021/058194
§ 371(c)(1), (2) Date Mar. 3, 2023,
PCT Pub. No. WO2022/053963, PCT Pub. Date Mar. 17, 2022.
Claims priority of application No. 102020000021517 (IT), filed on Sep. 11, 2020.
Prior Publication US 2023/0313410 A1, Oct. 5, 2023
Int. Cl. C30B 25/08 (2006.01); C23C 16/32 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C30B 25/12 (2006.01); C30B 25/14 (2006.01); C30B 25/18 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01)
CPC C30B 25/14 (2013.01) [C23C 16/325 (2013.01); C23C 16/45502 (2013.01); C23C 16/4584 (2013.01); C30B 25/08 (2013.01); C30B 25/12 (2013.01); C30B 25/183 (2013.01); C30B 29/36 (2013.01); H01L 21/02447 (2013.01); H01L 21/02529 (2013.01); H01L 21/02576 (2013.01); H01L 21/0262 (2013.01)] 20 Claims
OG exemplary drawing
 
1. Method for depositing a layer of silicon carbide with n-type doping onto a surface of a substrate placed horizontally on a rotating susceptor inside a reaction chamber by means of a CVD type process, the rotating susceptor being adapted for single-substrate support;
wherein the method includes introducing and flowing a gaseous mixture internally along the reaction chamber from a first side to a second side passing over a portion of a lower wall of said reaction chamber and then over said rotating susceptor supporting one substrate,
wherein the gaseous mixture comprises:
one or more gases being precursor of silicon carbide to be deposited,
a carrier gas, and
a precursor gas containing a substance adapted to give rise to n-type doping;
wherein said substance is adapted to be subjected to pyrolysis catalysed by contact with an internal surface of said reaction chamber forming species with stoichiometry NHxCySiz where x and y and z are comprised between 0 and 3 and x+y+z>0, said internal surface of the reaction chamber comprising walls adapted to be heated by induction which are made of silicon carbide or silicon carbide-coated graphite;
wherein said reaction chamber is at a temperature comprised in the range between 1450° C. and 1800° C. and at a pressure comprised in the range between 5 kPa and 30 kPa;
wherein said substrate is placed inside the reaction chamber in a region having a first longitudinal position and a second longitudinal position, wherein the availability respectively of Si, C and N decreases as the gaseous mixture travels from the first longitudinal position to the second longitudinal position.