US 12,325,917 B2
Reciprocating rotary CVD equipment and application method
Xiaoliang Jin, San Jose, CA (US); Waleyweitsung Sung, San Jose, CA (US); and Zhongyun Li, Shanghai (CN)
Assigned to BETONE TECHNOLOGY SHANGHAI, INC., Shanghai (CN)
Filed by BETONE TECHNOLOGY SHANGHAI, INC., Shanghai (CN)
Filed on Jul. 27, 2021, as Appl. No. 17/386,191.
Claims priority of application No. 202010458535.9 (CN), filed on May 27, 2020.
Prior Publication US 2022/0025516 A1, Jan. 27, 2022
Int. Cl. C23C 16/458 (2006.01); C23C 16/505 (2006.01)
CPC C23C 16/4584 (2013.01) [C23C 16/4586 (2013.01); C23C 16/505 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A reciprocating rotary chemical vapor deposition (CVD) apparatus, comprising:
a cavity (101) for performing thin film deposition in a vacuum cavity;
a wafer heating base (102) for performing a reciprocating rotation comprising: clockwise rotating by an angle θ1 from a starting position, then counterclockwise rotating by an angle θ2, and returning to the starting position through reciprocating rotations for N times, N being greater than or equal to 1; or counterclockwise rotating by an angle θ1 from a starting position, then clockwise rotating by an angle θ2, and returning to the starting position through reciprocating rotations for N times, N being greater than or equal to 1; and the rotational speed during the reciprocating rotation is independently controlled;
a rotating member (2021), bearings (2023), and a member (2022) that is hermetically connected to the cavity (101), the rotating member (2021) is fixedly and hermetically connected to the wafer heating base (102), the rotating member (2021) is movably and hermetically connected to the member (2022) that is hermetically connected to the cavity (101), and the rotating member (2021) is connected to a driving motor (201) through belts or gears, the driving motor (201) drives the rotating member (2021) and the wafer heating base (102) to perform reciprocating rotation;
a gap (2025) disposed between the rotating member (2021) and the member (2022) that is hermetically connected to the cavity (101) is filled with a magnetic fluid (2024);
a purge gas guide ring (120) located in the cavity (101), a slit channel (130) is formed between the purge gas guide ring (120) and the wafer heating base (102), a range of a width W of the slit channel (130) is greater than 0 mm and less than or equal to 1 mm, a range of a length L of the slit channel (130) is greater than or equal to 5 mm, and a purge gas passing from the purge gas guide ring (120) to the cavity (101) through the rotating sealing mechanism (202);
a sealing ring (500) located between the bottom of the wafer heating base (102) and the rotating member (2021);
a supply line (103) is led out from the bottom of the wafer heating base.