US 12,325,914 B2
Precursor delivery system and method for cyclic deposition
Martin J. Salinas, Campbell, CA (US); Miguel Saldana, Santa Cruz, CA (US); and Victor Calderon, Santa Clara, CA (US)
Assigned to Eugenus, Inc., San Jose, CA (US)
Filed by Eugenus, Inc., San Jose, CA (US)
Filed on Jan. 25, 2022, as Appl. No. 17/584,126.
Claims priority of provisional application 63/142,238, filed on Jan. 27, 2021.
Prior Publication US 2022/0251704 A1, Aug. 11, 2022
Int. Cl. C23C 16/455 (2006.01); C23C 16/34 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/45527 (2013.01) [C23C 16/34 (2013.01); C23C 16/345 (2013.01); C23C 16/45561 (2013.01); H01L 21/02186 (2013.01); H01L 21/0228 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method of depositing a thin film, the method comprising:
alternatingly exposing a substrate in a thin film deposition chamber to a plurality of precursors in a plurality of cycles,
wherein alternatingly exposing the substrate comprises introducing a first one of the precursors into the thin film deposition chamber by independently actuating two or more first atomic layer deposition (ALD) valves connected in parallel to a common gas distribution plate for supplying the first one of the precursors into the thin film deposition chamber,
wherein independently actuating the two or more first ALD valves comprises simultaneously opening the two or more first ALD valves for at least part of the time during introducing the first one of the precursors into the thin film deposition chamber during a same one of the cycles, and
wherein the first one of the precursors passing through the two or more first ALD valves is joined before being introduced through a central opening in the common gas distribution plate.