US 12,325,913 B2
Deflector for chamber cleaning
Kuang-Wei Cheng, Hsinchu (TW); Sung-Ju Huang, Taipei (TW); Yung-Tsun Liu, Taipei (TW); Chih-Tsung Lee, Hsinchu (TW); and Chyi-Tsong Ni, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 15, 2022, as Appl. No. 17/671,966.
Prior Publication US 2023/0257875 A1, Aug. 17, 2023
Int. Cl. C23C 16/44 (2006.01); B08B 9/08 (2006.01); C23C 16/32 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/4405 (2013.01) [B08B 9/08 (2013.01); C23C 16/325 (2013.01); C23C 16/401 (2013.01); C23C 16/45525 (2013.01); H01L 21/02126 (2013.01); H01L 21/0228 (2013.01); B08B 2209/08 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating semiconductor devices, said method comprising:
loading one or more semiconductor wafers into a plurality of stations provided within a process chamber;
applying a process to the semiconductor wafers which deposits a silicon carbon oxide (SiCO) on the one or more semiconductor wafers within the process chamber; and
cleaning the process chamber;
wherein said cleaning comprises:
flowing a cleaning gas into the process chamber toward a deflector arranged in the process chamber, said deflector having a first surface upon which the flowed cleaning gas impinges, said first surface directing a first portion of the flowed cleaning gas impinging thereon in a first trajectory toward a first end of the process chamber and directing a second portion of the flowed cleaning gas impinging thereon in a second trajectory toward a second end of the process chamber, said second end being opposite the first end.