US 12,325,102 B2
Chemical mechanical polishing apparatus and method
Shich-Chang Suen, Hsinchu (TW); Liang-Guang Chen, Hsinchu (TW); and Kei-Wei Chen, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 5, 2021, as Appl. No. 17/222,005.
Application 17/222,005 is a continuation of application No. 16/031,899, filed on Jul. 10, 2018, granted, now 10,967,478.
Claims priority of provisional application 62/565,760, filed on Sep. 29, 2017.
Prior Publication US 2021/0220962 A1, Jul. 22, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. B24B 37/04 (2012.01); B24B 37/20 (2012.01); B24B 37/22 (2012.01); B24B 37/24 (2012.01)
CPC B24B 37/046 (2013.01) [B24B 37/044 (2013.01); B24B 37/20 (2013.01); B24B 37/22 (2013.01); B24B 37/24 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
distributing a chemical mechanical polishing slurry onto a platen; and
applying a first voltage to an electric field element while the chemical mechanical polishing slurry is present on the platen, wherein the applying the first voltage electrostatically attracts oppositely charged abrasive particles within the chemical mechanical polishing slurry towards the platen;
applying a second voltage to the electric field element while the chemical mechanical polishing slurry is present on the platen, the second voltage being different from the first voltage;
removing the second voltage;
after the removing the second voltage, waiting; and
after the waiting, applying a third voltage to the electric field element.