CPC H10N 70/8833 (2023.02) [H10B 63/80 (2023.02); H10N 70/023 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/841 (2023.02)] | 12 Claims |
1. A resistive random-access memory (RRAM) cell comprising:
a bottom electrode;
a metal oxide layer, the metal oxide layer having a central portion that is in direct contact with the bottom electrode, a peripheral portion that is nonplanar with the central portion, and a vertical portion between the central portion and the peripheral portion;
a top electrode directly above the metal oxide layer; and
a dielectric layer, wherein an outer surface of the vertical portion of the metal oxide layer is directly adjacent to the dielectric layer.
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