US 12,004,436 B2
RRAM with high work function cap
Soon-Cheon Seo, Glenmont, NY (US); Min Gyu Sung, Latham, NY (US); Takashi Ando, Eastchester, NY (US); Chanro Park, Clifton Park, NY (US); Mary Claire Micaller Silvestre, Clifton Park, NY (US); and Xuefeng Liu, Schenectady, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Jul. 28, 2022, as Appl. No. 17/815,582.
Prior Publication US 2024/0040940 A1, Feb. 1, 2024
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01)
CPC H10N 70/8833 (2023.02) [H10B 63/80 (2023.02); H10N 70/023 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/841 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A resistive random-access memory (RRAM) cell comprising:
a bottom electrode;
a metal oxide layer, the metal oxide layer having a central portion that is in direct contact with the bottom electrode, a peripheral portion that is nonplanar with the central portion, and a vertical portion between the central portion and the peripheral portion;
a top electrode directly above the metal oxide layer; and
a dielectric layer, wherein an outer surface of the vertical portion of the metal oxide layer is directly adjacent to the dielectric layer.