US 12,004,435 B2
Tunable resistive random access memory cell
Min Gyu Sung, Latham, NY (US); Soon-Cheon Seo, Glenmont, NY (US); and Chanro Park, Clifton Park, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Jun. 1, 2022, as Appl. No. 17/804,912.
Prior Publication US 2023/0397514 A1, Dec. 7, 2023
Int. Cl. G11C 11/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/8418 (2023.02) [H10B 63/30 (2023.02); H10N 70/063 (2023.02); H10N 70/828 (2023.02); H10N 70/8833 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a resistive random access memory (RRAM) cell, the method comprising:
forming a first wire;
forming an insulator on the first wire, the insulator having a pore and an insulator surface;
forming a first electrode layer on the first wire and the insulator, the first electrode having an electrode surface;
recessing the first electrode layer such that the electrode surface is recessed toward the first wire from the insulator surface;
forming a switching layer on the insulator and the first electrode; and
forming a second electrode on the switching layer.