CPC H10N 70/8418 (2023.02) [H10B 63/30 (2023.02); H10N 70/063 (2023.02); H10N 70/828 (2023.02); H10N 70/8833 (2023.02)] | 20 Claims |
1. A method of manufacturing a resistive random access memory (RRAM) cell, the method comprising:
forming a first wire;
forming an insulator on the first wire, the insulator having a pore and an insulator surface;
forming a first electrode layer on the first wire and the insulator, the first electrode having an electrode surface;
recessing the first electrode layer such that the electrode surface is recessed toward the first wire from the insulator surface;
forming a switching layer on the insulator and the first electrode; and
forming a second electrode on the switching layer.
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