US 12,004,381 B2
Display apparatus and method of manufacturing the same
Yung Bin Chung, Yongin-si (KR); Yeoungkeol Woo, Seongnam-si (KR); Kwanghyun Kim, Hwaseong-si (KR); Sangwoo Sohn, Yongin-si (KR); Dokeun Song, Yongin-si (KR); Sangwook Lee, Yongin-si (KR); and Heon Sik Ha, Hwaseong-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do (KR)
Filed by Samsung Display Co., Ltd., Yongin-Si (KR)
Filed on Oct. 19, 2021, as Appl. No. 17/504,927.
Application 17/504,927 is a continuation of application No. 16/575,845, filed on Sep. 19, 2019, granted, now 11,158,693.
Claims priority of application No. 10-2018-0118152 (KR), filed on Oct. 4, 2018.
Prior Publication US 2022/0037435 A1, Feb. 3, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H10K 59/124 (2023.01); H01L 27/12 (2006.01); H10K 59/121 (2023.01)
CPC H10K 59/124 (2023.02) [H01L 27/1237 (2013.01); H10K 59/1213 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A display apparatus, comprising:
a base substrate;
an active pattern disposed on the base substrate;
a gate insulation layer disposed on the active pattern;
a gate electrode disposed on the gate insulation layer and overlapping the active pattern;
a first insulation layer disposed on the gate electrode and comprising silicon (Si), nitrogen (N), and hydrogen (H);
a second insulation layer disposed on the first insulation layer;
a storage electrode disposed between the first insulation layer and the second insulation layer and overlapping the gate electrode; and
a source electrode and a drain electrode which are disposed on the second insulation layer and are electrically connected to the active pattern,
wherein the first insulation layer has a total amount of hydrogen of about 5 atomic percent to about 30 atomic percent, Si—H bond in the first insulation layer is about 0.1 atomic percent to about 10 atomic percent, and the first insulation layer has a reflective index of about 1.884 to about 2.312.