US 12,004,364 B2
Light-emitting device and apparatus including same
Dongchan Kim, Yongin-si (KR); Jiyoung Moon, Yongin-si (KR); Heechang Yoon, Yongin-si (KR); Jihye Lee, Yongin-si (KR); Hakchoong Lee, Yongin-si (KR); Haemyeong Lee, Yongin-si (KR); Myungsuk Han, Yongin-si (KR); Jihwan Yoon, Yongin-si (KR); Jonghyuk Lee, Yongin-si (KR); and Yoonhyeung Cho, Yongin-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co., LTD., Yongin-si (KR)
Filed on Jul. 5, 2023, as Appl. No. 18/218,563.
Application 18/218,563 is a continuation of application No. 17/226,231, filed on Apr. 9, 2021, granted, now 11,744,100.
Claims priority of application No. 10-2020-0043603 (KR), filed on Apr. 9, 2020; and application No. 10-2021-0012657 (KR), filed on Jan. 28, 2021.
Prior Publication US 2023/0354635 A1, Nov. 2, 2023
Int. Cl. H10K 50/17 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 59/12 (2023.01); H10K 59/40 (2023.01)
CPC H10K 50/171 (2023.02) [H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 59/12 (2023.02); H10K 59/40 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A light-emitting device comprising:
a first electrode;
a second electrode facing the first electrode; and
an organic layer between the first electrode and the second electrode,
wherein the organic layer includes a first emission layer, a second emission layer, and a charge generating unit between the first emission layer and the second emission layer,
the charge generating unit includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer,
wherein the n-type charge generating layer includes an n-type organic compound and a metal material,
the n-type organic compound includes a phenanthrene-based compound, a phosphine oxide-based compound and/or a phenanthroline-based compound,
the metal material includes at least one metal selected from an alkali metal, an alloy of an alkali metal, an alkaline earth metal, an alloy of an alkaline earth metal, a lanthanide metal, and an alloy of a lanthanide metal,
the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material,
the inorganic semiconductor material included in the p-type charge generating layer and the inorganic semiconductor material included in the p-type hole injection layer each independently include a halide of a transition metal, a halide of a post-transition metal, bismuth, tellurium, a halide of bismuth, a sulfide of bismuth, a selenide of bismuth, a telluride of bismuth, a telluride of a transition metal, a telluride of a post-transition metal, a sulfide of a transition metal, a sulfide of a post-transition metal, a selenide of a transition metal, a selenide of a post-transition metal, or any combination thereof, and
the inorganic semiconductor material included in the p-type charge generating layer is substantially identical to or different from the inorganic semiconductor material included in the p-type hole injection layer.