US 12,004,356 B2
Cross-point magnetoresistive random memory array and method of making thereof using self-aligned patterning
Lei Wan, San Jose, CA (US); Jordan Katine, Mountain View, CA (US); and Tsai-Wei Wu, San Jose, CA (US)
Assigned to SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed by SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed on Mar. 14, 2022, as Appl. No. 17/654,762.
Application 17/477,958 is a division of application No. 16/666,967, filed on Oct. 29, 2019, granted, now 11,152,425, issued on Oct. 19, 2021.
Application 17/354,541 is a division of application No. 16/460,820, filed on Jul. 2, 2019, granted, now 11,056,534, issued on Jul. 6, 2021.
Application 17/654,762 is a continuation in part of application No. 17/477,958, filed on Sep. 17, 2021, granted, now 11,631,716.
Application 17/654,762 is a continuation in part of application No. 17/590,561, filed on Feb. 1, 2022, granted, now 11,765,911.
Application 17/590,561 is a continuation of application No. 16/401,172, filed on May 2, 2019, granted, now 11,271,035, issued on Mar. 8, 2022.
Application 17/654,762 is a continuation in part of application No. 17/354,541, filed on Jun. 22, 2021, granted, now 11,882,706.
Claims priority of provisional application 62/867,590, filed on Jun. 27, 2019.
Prior Publication US 2022/0223649 A1, Jul. 14, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/00 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01)
CPC H10B 61/10 (2023.02) [H10N 50/01 (2023.02); H10N 50/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory array, comprising:
first electrically conductive lines laterally extending along a first horizontal direction and laterally spaced apart along a second horizontal direction;
rows of selector-magnetic tunnel junction (selector-MTJ) assemblies located on a respective one of the first electrically conductive lines, wherein each of the selector-MTJ assemblies comprises a respective row of magnetic tunnel junction (MTJ) pillar structures and a respective row of selector-containing pillar structures that are arranged along the first horizontal direction, and a lateral spacing between neighboring pairs of selector-containing pillar structures that are laterally spaced apart along the first horizontal direction is less than a lateral spacing between neighboring pairs of selector-containing pillar structures that are laterally spaced apart along the second horizontal direction; and
second electrically conductive lines laterally extending along the second horizontal direction and overlying a respective column of the selector-MTJ assemblies.