US 12,004,355 B2
Magnetic tunnel junction element and magnetoresistive memory device
Yoshiaki Sonobe, Fujisawa (JP); and Hideto Yanagihara, Tsukuba (JP)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 11, 2021, as Appl. No. 17/498,023.
Claims priority of application No. 2020-178331 (JP), filed on Oct. 23, 2020; and application No. 10-2020-0173582 (KR), filed on Dec. 11, 2020.
Prior Publication US 2022/0130901 A1, Apr. 28, 2022
Int. Cl. H10B 61/00 (2023.01); H01F 10/32 (2006.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10B 61/00 (2023.02) [H01F 10/3254 (2013.01); H01F 10/3268 (2013.01); H01F 10/3286 (2013.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H01F 10/329 (2013.01); H10N 50/85 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A magnetic tunnel junction element comprising:
a fixed layer maintaining a magnetization direction;
an insulating layer;
a free layer having a variable magnetization direction; and
an antiferromagnetic oxide layer in direct contact with the free layer, wherein
the fixed layer, the free layer, the insulating layer, and the antiferromagnetic oxide layer are sequentially stacked,
a thickness of the antiferromagnetic oxide layer is greater than or equal to about 0.5 nm and less than or equal to about 2 nm, and
wherein an electrical resistance of the antiferromagnetic oxide layer is less than an electrical resistance of the insulating layer.