US 12,004,349 B2
Semiconductor device and method for manufacturing the same
Tatsufumi Hamada, Nagoya Aichi (JP); Tomohiro Kuki, Yokkaichi Mie (JP); Yosuke Mutsuno, Yokkaichi Mie (JP); Shinichi Sotome, Yokkaichi Mie (JP); and Ryota Suzuki, Yokkaichi Mie (JP)
Assigned to KIOXIA CORPORATION, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Aug. 27, 2021, as Appl. No. 17/459,825.
Claims priority of application No. 2021-032083 (JP), filed on Mar. 1, 2021.
Prior Publication US 2022/0278124 A1, Sep. 1, 2022
Int. Cl. H10B 43/27 (2023.01)
CPC H10B 43/27 (2023.02) 17 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first stacked film including a plurality of first electrode layers separated from each other;
an insulating layer provided on the first stacked film;
a second stacked film provided on the insulating layer and including a plurality of second electrode layers separated from each other; and
a columnar portion including a first insulating film, a charge storage layer, a second insulating film, and a semiconductor layer, and extending along a first direction through the first stacked film, the insulating layer, and the second stacked film, wherein
the columnar portion extending in the insulating layer includes a first portion having a first width in a second direction intersecting the first direction, and a second portion provided at a different location along the first direction and having a second width in the second direction,
the columnar portion extending in the second stacked film includes a third portion having a third width along the second direction,
the second width is larger than the first width and the third width.