US 12,004,347 B2
Three-dimensional memory device including self-aligned drain-select-level isolation structures and method of making thereof
Nobuyuki Fujimura, Yokkaichi (JP); Satoshi Shimizu, Yokkaichi (JP); and Takumi Moriyama, Yokkaichi (JP)
Assigned to SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed by SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed on Apr. 22, 2021, as Appl. No. 17/237,476.
Prior Publication US 2022/0344365 A1, Oct. 27, 2022
Int. Cl. H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02)] 9 Claims
OG exemplary drawing
 
4. A three-dimensional memory device, comprising:
an alternating stack of insulating layers and electrically conductive layers;
a plurality of arrays of memory openings vertically extending through the alternating stack;
a plurality of arrays of memory opening fill structures located in the plurality of arrays of memory openings, wherein each of the memory opening fill structures comprises a respective vertical stack of memory elements, and each array of memory opening fill structures comprises a respective set of rows of memory opening fill structures that are arranged along a first horizontal direction, and the plurality of arrays of memory opening fill structures are laterally spaced apart from each other along a second horizontal direction;
a plurality of dielectric plates laterally surrounding a respective array of memory opening fill structures, wherein each of the plurality of dielectric plates has an outer sidewall that is laterally spaced from a most proximal memory opening fill structure within a respective array of memory opening fill structures by a lateral offset distance; and
drain-select-level isolation structures located between a respective neighboring pair of arrays of memory opening fill structures,
wherein each of the drain-select-level isolation structures comprises a respective pair of laterally undulating lengthwise sidewalls including a respective contiguous set of vertically straight and laterally concave sidewall segments that are adjoined to each other.