US 12,004,344 B2
Method of reducing wrap imparted to silicon wafer by semiconductor layers
Toshiaki Ono, Tokyo (JP); and Bong-Gyun Ko, Tokyo (JP)
Assigned to SUMCO CORPORATION, Tokyo (JP)
Filed by SUMCO CORPORATION, Tokyo (JP)
Filed on Dec. 3, 2021, as Appl. No. 17/541,767.
Application 17/541,767 is a continuation of application No. 16/619,143, abandoned, previously published as PCT/JP2018/021721, filed on Jun. 6, 2018.
Claims priority of application No. 2017-134918 (JP), filed on Jul. 10, 2017.
Prior Publication US 2022/0093624 A1, Mar. 24, 2022
Int. Cl. H10B 41/20 (2023.01); H01L 21/02 (2006.01); H10B 41/35 (2023.01)
CPC H10B 41/20 (2023.02) [H10B 41/35 (2023.02); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/022 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method of reducing an amount of warp imparted to a silicon wafer having a (110) plane orientation and a <111> notch orientation by anisotropic film stress of a multilayer film that is to be formed on a surface of the silicon wafer, the method comprising:
forming the multilayer film on a surface of the silicon wafer in an orientation so that a direction in which the warp of imparted to the wafer will be greatest coincides with a direction in which Young's modulus of a crystal orientation of the silicon wafer is greatest.