US 12,003,220 B2
Hybrid RF integrated circuit device
Lei Zhao, Chandler, AZ (US); Greg Durnan, Tempe, AZ (US); and Abdulrhman M. S. Ahmed, Gilbert, AZ (US)
Assigned to MACOM Technology Solutions Holdings, Inc., Lowell, MA (US)
Filed by MACOM Technology Solutions Holdings, Inc., Lowell, MA (US)
Filed on Sep. 16, 2020, as Appl. No. 17/022,221.
Prior Publication US 2022/0085771 A1, Mar. 17, 2022
Int. Cl. H03F 3/195 (2006.01); H03F 1/02 (2006.01)
CPC H03F 3/195 (2013.01) [H03F 1/0288 (2013.01); H03F 2200/318 (2013.01); H03F 2200/451 (2013.01)] 29 Claims
OG exemplary drawing
 
1. A Radio Frequency (RF) amplifier device comprising:
an integrated circuit (IC) chip comprising:
a substrate;
a first transistor formed on the substrate;
a first operational circuit comprising one or more electrical components, other than a bonding pad, bond wire, or other conductor, formed on the substrate and electrically coupled to the first transistor, and configured to perform one or more of impedance matching, phase shifting, and harmonic termination operations; and
a first port, other than an RF input or output, comprising a bond pad and at least one bond wire and configured to electrically couple the first operational circuit with external circuitry to thereby adjust the impedance matching, phase shifting, or harmonic termination operations;
whereby the one or more components of the first operational circuit and the external circuitry together perform RF tuning.