US 12,002,905 B2
Light emitting element, display device including the same, and method for manufacturing the display device
Jae Hoon Jung, Seoul (KR); and Sung Chan Jo, Seoul (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Appl. No. 17/250,713
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
PCT Filed Jan. 3, 2019, PCT No. PCT/KR2019/000115
§ 371(c)(1), (2) Date Feb. 23, 2021,
PCT Pub. No. WO2020/040368, PCT Pub. Date Feb. 27, 2020.
Claims priority of application No. 10-2018-0099339 (KR), filed on Aug. 24, 2018.
Prior Publication US 2021/0202800 A1, Jul. 1, 2021
Int. Cl. H01L 33/44 (2010.01); B82B 3/00 (2006.01); C07F 5/02 (2006.01); C07F 7/18 (2006.01); H01L 25/075 (2006.01); H01L 27/12 (2006.01); H01L 33/24 (2010.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/44 (2013.01) [B82B 3/0052 (2013.01); C07F 5/027 (2013.01); C07F 7/1804 (2013.01); H01L 25/0753 (2013.01); H01L 27/1214 (2013.01); H01L 33/24 (2013.01); H01L 33/38 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0066 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A light emitting element comprising:
a first conductivity type semiconductor doped to have a first polarity;
an active layer on the first conductivity type semiconductor;
a second conductivity type semiconductor on the active layer and doped to have a second polarity different from the first polarity; and
an insulating material layer surrounding side surfaces of the first conductivity type semiconductor, the second conductivity type semiconductor, and the active layer,
wherein the insulating material layer comprises an insulating material film and an element orienter bonded to an outer peripheral surface of the insulating material film.