US 12,002,903 B2
Group-III nitride laminated substrate and semiconductor element
Hajime Fujikura, Hitachi (JP); Taichiro Konno, Hitachi (JP); and Takeshi Kimura, Hitachi (JP)
Assigned to SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo (JP)
Filed by SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo (JP)
Filed on Nov. 19, 2020, as Appl. No. 16/952,665.
Claims priority of application No. 2019-211370 (JP), filed on Nov. 22, 2019.
Prior Publication US 2021/0184080 A1, Jun. 17, 2021
Int. Cl. H01L 33/32 (2010.01)
CPC H01L 33/325 (2013.01) 13 Claims
OG exemplary drawing
 
1. A group III-nitride laminated substrate comprising:
an underlying substrate;
a first layer that is formed on the underlying substrate, wherein the first layer consists of aluminum nitride, with a top surface having Al-polarity; and
a second layer that is formed on the top surface of the first layer and is made of gallium nitride,
wherein the second layer has a thickness of 10 μm or less, a half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less.