US 12,002,897 B2
Infrared detecting device
Osamu Morohara, Tokyo (JP); Yoshiki Sakurai, Tokyo (JP); Hiromi Fujita, Tokyo (JP); and Hirotaka Geka, Tokyo (JP)
Assigned to Asahi Kasei Microdevices Corporation, Tokyo (JP)
Filed by Asahi Kasei Microdevices Corporation, Tokyo (JP)
Filed on Jun. 8, 2023, as Appl. No. 18/331,173.
Application 18/331,173 is a continuation of application No. 17/195,859, filed on Mar. 9, 2021, granted, now 11,715,808.
Claims priority of application No. 2020-040600 (JP), filed on Mar. 10, 2020.
Prior Publication US 2024/0113247 A1, Apr. 4, 2024
Int. Cl. H01L 31/109 (2006.01); G01J 5/08 (2022.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/109 (2013.01) [G01J 5/0853 (2013.01); H01L 31/035236 (2013.01); H01L 31/1844 (2013.01)] 8 Claims
 
1. An infrared detecting device comprising:
a semiconductor substrate;
a first layer having a first conductivity type on the semiconductor substrate;
a light receiving layer on the first layer; and
a second layer having a second conductivity type on the light receiving layer,
wherein a part of the first layer, the light receiving layer, and the second layer form a mesa structure,
the second layer contains AlzIn1-zSb (0.05<z<0.18),
the side surfaces and an upper surface of the mesa structure are covered with the protective layer,
a part of an upper surface of the second layer that forms an interface between the second layer and the protective layer has an oxide layer made of a constituent material of the second layer, and
the oxide layer includes an oxide of Al and has no oxide of Sb.