CPC H01L 31/109 (2013.01) [G01J 5/0853 (2013.01); H01L 31/035236 (2013.01); H01L 31/1844 (2013.01)] | 8 Claims |
1. An infrared detecting device comprising:
a semiconductor substrate;
a first layer having a first conductivity type on the semiconductor substrate;
a light receiving layer on the first layer; and
a second layer having a second conductivity type on the light receiving layer,
wherein a part of the first layer, the light receiving layer, and the second layer form a mesa structure,
the second layer contains AlzIn1-zSb (0.05<z<0.18),
the side surfaces and an upper surface of the mesa structure are covered with the protective layer,
a part of an upper surface of the second layer that forms an interface between the second layer and the protective layer has an oxide layer made of a constituent material of the second layer, and
the oxide layer includes an oxide of Al and has no oxide of Sb.
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