US 12,002,889 B2
Devices including channel materials and passivation materials
Kamal M. Karda, Boise (ID); and Haitao Liu, Boise (ID)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jan. 26, 2023, as Appl. No. 18/160,208.
Application 18/160,208 is a continuation of application No. 16/682,617, filed on Nov. 13, 2019, granted, now 11,594,644.
Prior Publication US 2023/0178661 A1, Jun. 8, 2023
Int. Cl. H01L 29/786 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/78696 (2013.01) [H01L 29/66666 (2013.01); H01L 29/6675 (2013.01); H01L 29/7869 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a vertical transistor comprising:
a passivation material;
a vertical channel material surrounding the passivation material, the vertical channel material exhibiting a U-shaped cross-section;
a dielectric material surrounding the vertical channel material; and
a conductive material surrounding the dielectric material; and
a conductive line underlying the vertical transistor, the vertical channel material extending into the conductive line.