US 12,002,886 B2
Semiconductor device and display device including the same
Seiichi Yoneda, Atsugi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Dec. 30, 2021, as Appl. No. 17/565,618.
Application 17/565,618 is a continuation of application No. 16/882,994, filed on May 26, 2020, granted, now 11,302,819.
Application 16/882,994 is a continuation of application No. 16/002,435, filed on Jun. 7, 2018, granted, now 10,680,110, issued on Jun. 9, 2020.
Application 16/002,435 is a continuation of application No. 13/710,929, filed on Dec. 11, 2012, granted, now 10,002,968, issued on Jun. 19, 2018.
Claims priority of application No. 2011-273413 (JP), filed on Dec. 14, 2011.
Prior Publication US 2022/0123139 A1, Apr. 21, 2022
Int. Cl. H01L 29/786 (2006.01); H01L 27/12 (2006.01)
CPC H01L 29/786 (2013.01) [H01L 27/1225 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A display device comprising:
a pixel, the pixel comprising:
a light-emitting element comprising:
a pixel electrode;
an electroluminescent layer over the pixel electrode; and
an upper electrode over the electroluminescent layer;
a first transistor comprising an oxide semiconductor film;
a second transistor comprising a semiconductor film;
a first insulating film over the semiconductor film; and
a second insulating film over the first insulating film,
wherein the oxide semiconductor film is located over the second insulating film,
wherein the oxide semiconductor film comprises a channel formation region of the first transistor,
wherein the semiconductor film comprises a channel formation region of the second transistor,
wherein the semiconductor film is located over a substrate,
wherein the oxide semiconductor film and the semiconductor film overlap with each other,
wherein a gate electrode of the first transistor is electrically connected to a gate electrode of the second transistor,
wherein the pixel electrode comprises a region that does not overlap with the channel formation region of the second transistor,
wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to the pixel electrode,
wherein the oxide semiconductor film is in contact with a side surface of one of a source electrode and a drain electrode of the first transistor, a top surface of the one of the source electrode and the drain electrode of the first transistor, a side surface of the other of the source electrode and the drain electrode of the first transistor, and a top surface of the other of the source electrode and the drain electrode of the first transistor,
wherein the oxide semiconductor film comprises indium, gallium, and zinc, and
wherein the oxide semiconductor film comprises a region that does not overlap with the gate electrode of the first transistor, the source electrode of the first transistor, and the drain electrode of the first transistor.