| CPC H01L 29/7788 (2013.01) [H01L 27/092 (2013.01); H01L 29/24 (2013.01); H01L 29/41741 (2013.01); H01L 29/7831 (2013.01); H01L 29/78642 (2013.01)] | 20 Claims |
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1. A vertical type transistor comprising:
a substrate;
a first source/drain electrode layer on the substrate;
a second source/drain electrode layer above the first source/drain electrode layer;
a first gate electrode layer between the first and second source/drain electrode layers;
a first gate insulating film on a lateral side of the first gate electrode layer;
a lower spacer between the first source/drain electrode layer and the first gate electrode layer; and
a first channel layer comprising a 2D semiconductor, wherein
the first channel layer is on a lateral side of a hole, the hole passing through the second source/drain electrode layer, the first gate insulating film, and the first source/drain electrode layer,
a length in a horizontal direction of the second source/drain electrode is greater than a length in the horizontal direction of the gate electrode, and
a bottom of first gate insulating film contacts a top surface of the lower spacer.
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