US 12,002,869 B2
Gate contact structures and cross-coupled contact structures for transistor devices
Ruilong Xie, Niskayuna, NY (US); Youngtag Woo, San Ramon, CA (US); Daniel Chanemougame, Niskayuna, NY (US); Bipul C. Paul, Mechanicville, NY (US); Lars W. Liebmann, Mechanicville, NY (US); Heimanu Niebojewski, Cohoes, NY (US); Xuelian Zhu, San Jose, CA (US); Lei Sun, Altamont, NY (US); and Hui Zang, Guilderland, NY (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Sep. 2, 2022, as Appl. No. 17/901,887.
Application 17/901,887 is a division of application No. 16/804,264, filed on Feb. 28, 2020, granted, now 11,469,309.
Application 16/804,264 is a division of application No. 15/791,650, filed on Oct. 24, 2017, granted, now 10,651,284, issued on May 12, 2020.
Prior Publication US 2022/0416054 A1, Dec. 29, 2022
Int. Cl. H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/4975 (2013.01) [H01L 21/28 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 27/0886 (2013.01); H01L 27/092 (2013.01); H01L 29/41775 (2013.01); H01L 29/66477 (2013.01); H01L 29/783 (2013.01)] 16 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) product, comprising:
a first conductive source/drain contact structure of a first transistor;
an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure, wherein the insulating source/drain cap physically contacts the upper surface of the first conductive source/drain contact structure;
a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor, wherein an upper surface of the GSD contact structure is positioned at a first level that is at a level that is below a level of an upper surface of the insulating source/drain cap, and wherein the GSD contact structure physically contacts a side surface of the insulating source/drain cap, a side surface of the first conductive source/drain contact structure, and a top surface of the first conductive source/drain contact structure; and
a gate contact structure that is conductively coupled to a second gate structure of a third transistor, the third transistor including a second conductive source/drain contact structure and a second insulating source/drain cap positioned above an upper surface of the second conductive source/drain contact structure, wherein the gate contact structure physically contacts an upper surface of the second insulating source/drain cap of the third transistor, wherein an upper surface of the gate contact structure is positioned at a second level that is at a level that is above the first level.