US 12,002,859 B2
Semiconductor device and method for producing a substrate for a semiconductor component, and use of indium during production of same
Jos Boschker, Berlin (DE); Christiane Frank-Rotsch, Oberkraemer (DE); Thomas Schroeder, Berlin (DE); and Martin Zorn, Berlin (DE)
Assigned to Jenoptik Optical Systems GmbH, Jena (DE); and Forschungsverbund Berlin e.V., Berlin (DE)
Appl. No. 18/039,668
Filed by JENOPTIK Optical Systems GmbH, Jena (DE); and Forschungsverbund Berlin e.V., Berlin (DE)
PCT Filed Nov. 24, 2021, PCT No. PCT/EP2021/082758
§ 371(c)(1), (2) Date May 31, 2023,
PCT Pub. No. WO2022/117405, PCT Pub. Date Jun. 9, 2022.
Claims priority of application No. 10 2020 131 850.2 (DE), filed on Dec. 1, 2020.
Prior Publication US 2023/0352543 A1, Nov. 2, 2023
Int. Cl. H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/207 (2006.01)
CPC H01L 29/207 (2013.01) [H01L 21/02395 (2013.01); H01L 21/02433 (2013.01); H01L 29/045 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate,
wherein the substrate is monocrystalline,
wherein the substrate includes a gallium indium arsenide solid solution having the empirical formula Ga(1-x)In(x)As, where the indium content x is between 0.1 percent and 4 percent,
wherein the substrate is produced by a process comprising the manufacturing of a solid solution of the substrate in one step by the vertical gradient freeze (VGF) method for crystal growing; and
at least one aluminum gallium arsenide-based semiconductor component with an epitaxially produced semiconductor sequence,
wherein the semiconductor component is disposed on the substrate, and
wherein the semiconductor component is executed as a laser diode.