CPC H01L 29/207 (2013.01) [H01L 21/02395 (2013.01); H01L 21/02433 (2013.01); H01L 29/045 (2013.01)] | 13 Claims |
1. A semiconductor device comprising:
a substrate,
wherein the substrate is monocrystalline,
wherein the substrate includes a gallium indium arsenide solid solution having the empirical formula Ga(1-x)In(x)As, where the indium content x is between 0.1 percent and 4 percent,
wherein the substrate is produced by a process comprising the manufacturing of a solid solution of the substrate in one step by the vertical gradient freeze (VGF) method for crystal growing; and
at least one aluminum gallium arsenide-based semiconductor component with an epitaxially produced semiconductor sequence,
wherein the semiconductor component is disposed on the substrate, and
wherein the semiconductor component is executed as a laser diode.
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