US 12,002,832 B2
Solid-state image sensor, solid-state imaging device, and method of manufacturing solid-state image sensor
Shinpei Fukuoka, Kanagawa (JP); Moe Takeo, Tokyo (JP); Sho Nishida, Tokyo (JP); Hideaki Togashi, Kumamoto (JP); Takushi Shigetoshi, Kumamoto (JP); and Junpei Yamamoto, Kanagawa (JP)
Assigned to Sony Corporation, Tokyo (JP); and Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/261,233
Filed by SONY CORPORATION, Tokyo (JP); and SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jul. 23, 2019, PCT No. PCT/JP2019/028900
§ 371(c)(1), (2) Date Jan. 19, 2021,
PCT Pub. No. WO2020/022349, PCT Pub. Date Jan. 30, 2020.
Claims priority of application No. 2018-140151 (JP), filed on Jul. 26, 2018.
Prior Publication US 2021/0273008 A1, Sep. 2, 2021
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14636 (2013.01) [H01L 27/14683 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A solid-state image sensor, comprising:
a semiconductor substrate;
a charge accumulator disposed in the semiconductor substrate and configured to accumulate charge;
a photoelectric converter disposed above the semiconductor substrate and configured to convert light to charge; and
a through electrode passing through the semiconductor substrate and electrically connecting the charge accumulator with the photoelectric converter,
wherein, at an end portion on a photoelectric converter side of the through electrode, a cross-sectional area of a conductor positioned at a center of the through electrode in a cut section orthogonal to a through direction of the through electrode gradually increases toward the photoelectric converter along the through direction, and
wherein, in a cross section of the through electrode cut along the through direction, an end portion on a photoelectric converter side of the conductor has two first branch portions split from a center axis of the conductor.