US 12,002,826 B2
Solid-state imaging element and solid-state imaging apparatus
Hiroaki Matsuo, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Dec. 27, 2022, as Appl. No. 18/146,674.
Application 18/146,674 is a continuation of application No. 17/653,849, filed on Mar. 7, 2022, granted, now 11,574,941.
Application 17/653,849 is a continuation of application No. 17/126,751, filed on Dec. 18, 2020, granted, now 11,302,728, issued on Apr. 12, 2022.
Application 17/126,751 is a continuation of application No. 16/327,248, granted, now 10,886,313, issued on Jan. 5, 2021, previously published as PCT/JP2017/027603, filed on Jul. 31, 2017.
Claims priority of application No. 2016-177311 (JP), filed on Sep. 12, 2016.
Prior Publication US 2023/0326941 A1, Oct. 12, 2023
Int. Cl. H01L 27/146 (2006.01); H04N 25/60 (2023.01); H04N 25/76 (2023.01); H10K 19/00 (2023.01); H10K 39/32 (2023.01)
CPC H01L 27/14614 (2013.01) [H01L 27/14616 (2013.01); H01L 27/14638 (2013.01); H01L 27/14643 (2013.01); H01L 27/14647 (2013.01); H01L 27/14667 (2013.01); H04N 25/60 (2023.01); H04N 25/76 (2023.01); H10K 19/00 (2023.02); H10K 39/32 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A solid-state imaging element, comprising:
a first electrode including a plurality of electrodes, wherein the plurality of electrodes includes a charge accumulation electrode and a charge readout electrode;
a second electrode opposed to the first electrode; and
a photoelectric conversion layer between the first electrode and the second electrode, wherein
the first electrode has, at least in a portion, a first overlap section where the charge accumulation electrode overlaps with the charge readout electrode with a first insulation layer interposed therebetween,
the charge accumulation electrode is configured to accumulate a charge generated in the photoelectric conversion layer, and
the charge readout electrode is configured to readout the charge generated in the photoelectric conversion layer.