US 12,002,825 B2
Solid-state imaging device and electronic apparatus with improved sensitivity
Ryo Fukui, Kanagawa (JP); and Takashi Machida, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/263,221
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jul. 26, 2019, PCT No. PCT/JP2019/029429
§ 371(c)(1), (2) Date Jan. 26, 2021,
PCT Pub. No. WO2020/036054, PCT Pub. Date Feb. 20, 2020.
Claims priority of application No. 2018-152938 (JP), filed on Aug. 15, 2018.
Prior Publication US 2021/0296378 A1, Sep. 23, 2021
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1461 (2013.01) [H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/1463 (2013.01); H01L 27/14645 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A solid-state imaging device comprising:
a semiconductor substrate having one surface and another surface opposed to the one surface;
a photoelectric conversion section formed to be embedded in the semiconductor substrate;
a charge holding section provided in the one surface of the semiconductor substrate while being stacked on the photoelectric conversion section;
an n-type semiconductor region provided in the one surface of the semiconductor substrate; and
a charge-voltage conversion section provided in the one surface of the semiconductor substrate,
wherein a charge generated in the photoelectric conversion section is transferred via the n-type semiconductor region to the charge holding section,
wherein the n-type semiconductor region extends to a position between the photoelectric conversion section and the charge holding section, and
wherein the charge holding section is surrounded by the n-type semiconductor region.